Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...

Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...

SSD enthusiasts know all about SLC, MLC, and TLC, but there are some new acronyms in SSD town: V-NAND and CTF. Samsung announced in a press release last night that it has begun mass production of “3D ...

Toshiba today announced the development of the first 48-layer, three-dimensional flash memory. Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory ...

Samsung has announced production of the first solid state drives (SSD) based on its new 3D V-NAND flash memory. V-NAND flash memories read and write twice as fast as conventional NAND memories, and ...

Samsung Electronics Develops First 16-Gigabit NAND Memory Using 50-nm Technology for Sharp Jump in Mobile Storage CapacitySamsung Electronics Develops First 16-Gigabit NAND Memory Samsung Electronics ...

IM Flash Technologies LLC, the joint venture between Intel and Micron Technologies, is considering how and when to take its NAND flash memory ICs into the third dimension but reckons its development ...