Abstract: Conventional packaging limits the full exploitation of the high-frequency and high-power density capabilities of silicon-carbide (SiC) metal-semiconductor-oxide field-effect transistors.
High-Temperature Encapsulation Materials for Power Modules: Technology and Future Development Trends
Abstract: The applications of wide bandgap (WBG) semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) in power modules are currently limited by the thermal stability of ...
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