With 12-in. silicon wafers now in production, achieving precision performance across tens of thousands of amplifiers requires fast and accurate tuning to keep cost low.
Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors
Abstract: Despite increasing indium content improves the field-effect mobility of metal–oxide thin-film transistors (TFTs), it is usually accompanied by the deterioration in bias stability. In this ...
Abstract: We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, ...
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