Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors
Abstract: Despite increasing indium content improves the field-effect mobility of metal–oxide thin-film transistors (TFTs), it is usually accompanied by the deterioration in bias stability. In this ...
Abstract: We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, ...
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